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Updated: May 17, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Ab initio investigation of the electronic properties of graphene on InAs(111)A
C Yelgel1, G P Srivastava, R H Miwa
1School of Physics, University of Exeter, Exeter, UK. cy234@ex.ac.uk
Abstract:
The equilibrium geometry and electronic structure of graphene on the most stable In-vacancy InAs(111)A surface has been investigated using the density functional and pseudopotential theories. The equilibrium distance between graphene and InAs(111) is found to be 3.05 Å with adsorption energy approximately 38 meV/C atom. According to our electronic band calculation, there is a re-distribution of the charge density around the graphene sheet, which leads to the development of a dipole moment along the surface normal. Scanning tunnelling microscopy image simulations suggest that the InAs(111) substrate is visible through the graphene layer.

