Related Experiment Video
Updated: May 17, 2026

11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Tunable band gap in gold intercalated graphene
Indra Sapkota1, Michael A Roundtree, John H Hall
1Department of Physics, Clark Atlanta University, Georgia 30314, USA.
Physical Chemistry Chemical Physics : PCCP
|November 1, 2012
Summary
Gold-intercalated epitaxial graphene exhibits tunable electronic properties. Applying an electric field can modify its band gap, paving the way for novel electronic device applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- Epitaxial graphene offers unique electronic properties.
- Gold intercalation creates quasi free-standing graphene with Dirac fermion behavior.
Purpose of the Study:
- Investigate the electronic characteristics of gold-intercalated epitaxial graphene under an electric field.
- Analyze the band structure evolution with applied bias.
Main Methods:
- Density-functional theory (DFT) calculations.
- Inclusion of interlayer van der Waals interactions.
Main Results:
- Gold-intercalated epitaxial graphene exhibits a tuneable band gap.
- The band gap is controllable via an applied perpendicular electric field.
Conclusions:
- Gold-intercalated epitaxial graphene shows promise for electronic device applications.
- Electric field control over the band gap is a key feature.
Related Concept Videos
Semiconductors
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Band Theory
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Energy Bands in Solids
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

