Valley and subband-selective electronic transport through a line defect embedded carbon nanotube

We theoretically demonstrate the possibility of realizing the valley and subband-selective electronic transport properties if line defects are embedded in an armchair carbon nanotube. The physical mechanism for such an interesting transport property is clearly due to the appearance of the special subband spanning two valleys without dispersion, caused by the presence of the line defect. In contrast to a perfect zigzag-edged graphene nanoribbon, which was previously suggested to be a nanodevice prototype to manipulate the valley and subband degrees of freedom, our structure, the line defect embedded carbon nanotube, is less demanding for the current nanotechnique. Therefore, our theoretical investigation provides an alternative and feasible structure to design carbon-based nanoelectronic devices.