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Updated: May 16, 2026
10:28
Compact Lens-less Digital Holographic Microscope for MEMS Inspection and Characterization
Published on: July 5, 2016
Variable magnification dual lens electron holography for semiconductor junction profiling and strain mapping
Y Y Wang1, J Li, A Domenicucci
1IBM Micro-electronics Division, Zip 40E, Hudson Valley Research Park, 2070 Route 52, Hopewell Junction, NY 12533, USA. wangyy@us.ibm.com
Ultramicroscopy
|November 17, 2012
Summary
Dual lens operation enhances electron holography for junction profiling and strain mapping. This method achieves high resolution and contrast, enabling detailed analysis of semiconductor devices.
Area of Science:
- Electron microscopy
- Materials science
- Solid-state physics
Background:
- Dual lens operation for electron holography was previously developed.
- Re-investigation focuses on bright field and dark field electron holography.
Purpose of the Study:
- To re-investigate dual lens operation for electron holography.
- To explore its application in junction profiling and strain mapping.
- To assess its performance with FEI instrumentation.
Main Methods:
- Utilized dual lens operation in electron holography.
- Employed FEI instrumentation (F20 and Titan).
- Performed bright field (junction profiling) and dark field (strain mapping) analyses.
Main Results:
- Dual lens operation offers a wide operational range for electron holography.
- High spatial resolution (1 nm), large field of view (450 nm), and high fringe contrast (26%) were achieved.
- Junction maps and Si device strain maps (<220> and <004> diffraction) were successfully acquired.
Conclusions:
- Dual lens operation is effective for advanced electron holography applications.
- A new metric, fringe quality number (N'), is proposed for hologram quality estimation.
- The study provides mathematical reasoning for the N' number.
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