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Transparent high-performance thin film transistors from solution-processed SnO2 /ZrO2 gel-like precursors
Jaewon Jang1, Rungrot Kitsomboonloha, Sarah L Swisher
1Department of Electrical Engineering and Computer Sciences, University of California-Berkeley, CA 94720-1770, USA.
Advanced Materials (Deerfield Beach, Fla.)
|November 20, 2012
Abstract:
This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and /(on) //(off) of 10(4) ~10(5) .
