Related Experiment Video
Updated: May 16, 2026
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Using carrier-depletion silicon modulators for optical power monitoring
Hui Yu1, Dietmar Korn, Marianna Pantouvaki
1Photonics Research Group, Department of Information Technology, Ghent University-imec, Center for Nano- and Biophotonics (NB Photonics), St.-Pietersnieuwstraat 41, Gent 9000, Belgium. hyu@intec.ugent.be
Abstract:
Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.
