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Updated: May 16, 2026

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
Published on: January 4, 2016
Surface passivation dependent photoluminescence from silicon quantum dot phosphors
Chang-Ching Tu1, Ji-Hao Hoo, Karl F Böhringer
1Materials Science and Engineering Department, University of Washington, Seattle, Washington 98195, USA. tucc@uw.edu
Abstract:
We demonstrate wavelength-tunable, air-stable and nontoxic phosphor materials based on silicon quantum dots (SiQDs). The phosphors, which are composed of micrometer-size silicon particles with attached SiQDs, are synthesized by an electrochemical etching method under ambient conditions. The photoluminescence (PL) peak wavelength can be controlled by the SiQD size due to quantum confinement effect, as well as the surface passivation chemistry of SiQDs. The red-emitting phosphors have PL quantum yield equal to 17%. The SiQD-phosphors can be embedded in polymers and efficiently excited by 405 nm light-emitting diodes for potential general lighting applications.
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