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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Related Experiment Video

Updated: May 16, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Heterojunction silicon microwire solar cells.

Majid Gharghi1, Ehsanollah Fathi, Boubacar Kante

  • 1NSF Nanoscale Science and Engineering Center (NSEC), University of California, Berkeley, 3112 Etcheverry Hall, UC Berkeley, California 94720, United States.

Nano Letters
|November 23, 2012
PubMed
Summary

This study presents novel amorphous silicon on crystalline silicon microwire solar cells. These radial heterojunction devices achieve over 12% efficiency despite short carrier lifetimes, showcasing potential for advanced photovoltaic applications.

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Last Updated: May 16, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
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Published on: November 16, 2018

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing
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Published on: November 9, 2015

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping
09:32

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

Published on: July 2, 2012

Area of Science:

  • Materials Science
  • Renewable Energy
  • Semiconductor Physics

Background:

  • High surface-to-volume ratios in micro/nanostructured solar cells can lead to significant voltage losses.
  • Effective surface passivation is crucial for maintaining performance in devices with short carrier diffusion lengths.

Purpose of the Study:

  • To develop radial heterojunction solar cells using amorphous silicon on crystalline silicon microwires.
  • To investigate the impact of wire radius and surface passivation on cell performance.
  • To achieve high efficiency in silicon solar cells with short carrier lifetimes.

Main Methods:

  • Fabrication of crystalline silicon microwires with radii matching minority carrier diffusion length (approx. 10 μm).
  • Deposition of thin amorphous silicon layers (12-16 nm) to form radial heterojunctions.
  • Characterization of photovoltaic performance, including photocurrent and voltage.

Main Results:

  • Achieved photocurrent densities of approximately 30 mA/cm².
  • Obtained open-circuit voltages close to 600 mV.
  • Demonstrated solar cell efficiencies exceeding 12% in silicon with carrier lifetimes under 1 μs.
  • Observed performance degradation due to nanocrystallite formation in the amorphous silicon film.

Conclusions:

  • Radial heterojunction solar cells on silicon microwires offer a viable path to high efficiency, even with short carrier lifetimes.
  • Optimized wire radius and high surface passivation are key to mitigating voltage losses.
  • Controlling film quality, specifically avoiding nanocrystallite formation, is essential for maintaining passivation and performance.