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Temperature stable 1.3 μm emission from GaAs.

Slawomir Prucnal1, Kun Gao, Wolfgang Anwand

  • 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 510119, 01314 Dresden, Germany. s.prucnal@hzdr.de

Optics Express
|November 29, 2012
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Summary

Quasi-temperature independent 1.3 μm photoluminescence was achieved in gallium arsenide (GaAs) via millisecond annealing. This emission originates from arsenic vacancy (V(As)) donor and X acceptor pairs, tunable by doping and annealing.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Gallium arsenide (GaAs) is crucial for optical communication devices.
  • Achieving GaAs luminescence at 1.3 μm is key for fiber optic transmission.
  • Existing methods face challenges in temperature stability and efficiency.

Purpose of the Study:

  • To realize quasi-temperature independent photoluminescence in GaAs at 1.3 μm.
  • To investigate the role of specific defects and annealing on emission properties.
  • To enable tunable light sources for optical communications.

Main Methods:

  • Millisecond-range thermal treatment (flash-lamp annealing) of GaAs wafers.
  • Investigation of nitrogen and manganese doped, and un-doped semi-insulating GaAs.
  • Photoluminescence spectroscopy to analyze emission characteristics.

Main Results:

  • Achieved quasi-temperature independent photoluminescence around 1.3 μm.
  • Identified arsenic vacancy (V(As)) donor and X acceptor pairs as the source of 1.3 μm emission.
  • Demonstrated tunability of emission intensity and defect concentration via doping and annealing.

Conclusions:

  • Millisecond annealing is an effective method for achieving stable 1.3 μm emission in GaAs.
  • Donor-acceptor pair engineering offers a pathway for tailored optoelectronic devices.
  • The findings pave the way for improved GaAs-based light sources in optical communications.