Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: May 16, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Improving CMOS-compatible Germanium photodetectors.

Guoliang Li1, Ying Luo, Xuezhe Zheng

  • 1Oracle Labs, Oracle, San Diego, California 92121, USA. glenn.li@oracle.com

Optics Express
|November 29, 2012
PubMed
Summary

We improved germanium photodetectors for better performance. These devices show high responsivity and low capacitance, ideal for optical communication systems.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Efficient, high-power, narrow-linewidth, continuous-wave quantum-dot semiconductor comb laser.

Scientific reports·2024
Same author

Atrial Cardiomyopathy: An Emerging Cause of the Embolic Stroke of Undetermined Source.

Frontiers in cardiovascular medicine·2021
Same author

The impact of self-efficacy on first onset and prognosis of major depressive disorder: Findings from a longitudinal study in a sample of Chinese first-year university students - Corrigendum.

Psychological medicine·2021
Same author

Multiple lipomata of the tricuspid valve and papillary muscle: case report.

European heart journal. Case reports·2021
Same author

The impact of self-efficacy on first onset and prognosis of major depressive disorder: findings from a longitudinal study in a sample of Chinese first-year university students.

Psychological medicine·2021
Same author

Structural Variations of the 3D Genome Architecture in Cervical Cancer Development.

Frontiers in cell and developmental biology·2021

Area of Science:

  • Optoelectronics
  • Semiconductor device physics
  • Integrated photonics

Background:

  • Germanium photodetectors are crucial for optical communications.
  • Existing designs face challenges in achieving high performance and low capacitance.
  • Low-temperature growth is essential for CMOS integration.

Purpose of the Study:

  • To enhance the design of evanescently coupled Germanium photodetectors.
  • To improve responsivity and reduce capacitance for C-band operation.
  • To enable integration within commercial CMOS processes.

Main Methods:

  • Low-temperature growth of Germanium.
  • Design optimization for evanescent coupling.
  • Fabrication using a commercial CMOS process.

More Related Videos

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

Related Experiment Videos

Last Updated: May 16, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

  • Performance characterization including responsivity and capacitance measurement.

    • Main Results:

    • Achieved responsivity greater than 0.8 A/W across the entire C-band.
    • Demonstrated device capacitance below 7 fF for 10 μm Ge length detectors.
    • Successful integration of improved photodetectors in a commercial CMOS platform.

    Conclusions:

    • The design improvements lead to high-performance Germanium photodetectors.
    • The achieved parameters are suitable for advanced optical communication applications.
    • Low-temperature grown, evanescently coupled Germanium photodetectors offer a promising solution for integrated photonics.