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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

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Published on: April 4, 2017

A 25 Gbps silicon microring modulator based on an interleaved junction.

J C Rosenberg1, W M J Green, S Assefa

  • 1IBM T J Watson Research Center, Yorktown Heights, New York 10598, USA.

Optics Express
|November 29, 2012
PubMed
Summary
This summary is machine-generated.

This study demonstrates a novel silicon microring modulator with low insertion loss and power consumption. It achieves high-speed operation and reliable data transmission over long distances.

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Area of Science:

  • Photonics
  • Integrated Optics
  • Semiconductor Devices

Background:

  • Microring resonators are key components in photonic integrated circuits.
  • Efficient modulation is crucial for high-speed optical communication.
  • Existing silicon modulators face challenges in balancing performance and power consumption.

Purpose of the Study:

  • To demonstrate a high-performance silicon microring modulator.
  • To achieve low V(π)L and insertion loss.
  • To enable energy-efficient, high-speed optical data transmission.

Main Methods:

  • Fabrication of a silicon microring modulator with an interleaved p-n junction phase shifter.
  • Characterization of electro-optic performance, including V(π)L and insertion loss.
  • High-speed testing at 25 Gbps and 40 Gbps, and fiber transmission experiments.

Main Results:

  • Achieved a V(π)L of 0.76 V-cm and off-resonance insertion loss < 0.2 dB.
  • Operated at 25 Gbps with 1.6 V drive voltage and 471 fJ/bit power consumption.
  • Demonstrated error-free transmission over >10 km of single-mode fiber.

Conclusions:

  • The demonstrated silicon microring modulator offers excellent performance metrics.
  • This technology is suitable for energy-efficient, high-speed optical interconnects.
  • Further advancements in silicon photonics for data communication are enabled.