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Updated: May 16, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Admittance of T-stub graphene nanoribbon structure
Jin Lan1, En-jia Ye, Wen-quan Sui
1Zhejiang-California International Nanosystem Institute, Electronic Department, Zhejiang University, Hangzhou, PR China 310029.
Abstract:
In this work, we studied ac responses of T-stub structures that are composed of armchair and zigzag graphene ribbons. Compared with uniform graphene ribbons, the T-stub structures show extraordinary properties. The ac responses of armchair and zigzag T-stub structures show different behaviors for different edge configurations. The imaginary part of admittance can be capacitive or inductive depending on the Fermi energy and structural parameters. These properties provide deeper understanding of dynamic processes of electrons in graphene-based nanodevices.

