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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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K-shell spectroscopy of silicon ions as diagnostic for high electric fields

R Loetzsch1, O Jäckel, S Höfer

  • 1Helmholtz-Institut Jena, Helmholtzweg 4, D-07743 Jena, Germany. robert.loetzsch@uni-jena.de

The Review of Scientific Instruments
|December 5, 2012
PubMed

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