Intrinsic electron-phonon resistivity of Bi2Se3 in the topological regime

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi(2)Se(3) in the absence of bulk conduction. When the gate-tuned chemical potential is near or below the Dirac point, the carrier density is strongly temperature-dependent, reflecting thermal activation from the nearby bulk valence band, while, above the Dirac point, unipolar n-type surface conduction is observed with negligible thermal activation of bulk carriers. In this regime, linear resistivity vs temperature reflects intrinsic electron-acoustic phonon scattering. A quantitative comparison with a theoretical transport calculation including both phonon and disorder effects gives the ratio of deformation potential to Fermi velocity D/ħν(F)=4.7 Å(-1). This strong phonon scattering in the Bi(2)Se(3) surface state gives intrinsic limits for the conductivity and charge carrier mobility at room temperature of ~550 μS per surface and ~10,000 cm(2)/V s.