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Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well

M S Miao1, Q Yan, C G Van de Walle

  • 1Materials Research Laboratory and Materials Department, University of California, Santa Barbara, California 93106-5050, USA. miaoms@engineering.ucsb.edu

Physical Review Letters
|December 11, 2012
PubMed

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