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Updated: May 15, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Measurement of geometrically necessary dislocation density with high resolution electron backscatter diffraction:
J Jiang1, T B Britton, A J Wilkinson
1Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK. jun.jiang@materials.ox.ac.uk
Abstract:
Recent advances using cross-correlation analysis of full resolution high quality electron backscatter diffraction (EBSD) patterns have provided a method for quantitatively mapping the stored dislocation density at high spatial resolution. Larger areas could be mapped with image binning or coarser step sizes. We have studied the effects of image binning and step size on the recovery of GND density. Our results suggest that: (i) the measured lower bound GND density noise floor broadly agrees with Wilkinson and Randman's 2009 prediction, where a decrease in step size or an increase in misorientation uncertainty increases the noise floor; (ii) increasing the step size results in a lower GND density being recovered as some dislocations are now considered as statistically stored dislocations (SSDs); (iii) in deformed samples the average GND density stays relatively constant as the degree of pattern binning is increased up to 8×8. Pattern binning thus provides a means of increasing the data acquisition and analysis rate without unduly degrading the data quality.
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