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Assessing the precision of strain measurements using electron backscatter diffraction--part 2: experimental
T B Britton1, J Jiang, R Clough
1Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.
Ultramicroscopy
|September 17, 2013
Summary
High-resolution electron backscatter diffraction (EBSD) mapped residual strain and lattice rotation in silicon after microhardness indentation. Finite element analysis validated experimental results, showing good agreement in residual strain and crack size.
Area of Science:
- Materials Science
- Solid Mechanics
- Crystallography
Background:
- Microhardness indentation is a standard technique for material characterization.
- Understanding residual stress and strain is crucial for material performance.
- Electron Backscatter Diffraction (EBSD) provides high-resolution crystallographic information.
Purpose of the Study:
- To map residual elastic strain and lattice rotation fields in silicon after microhardness indentation using high-resolution EBSD.
- To investigate the impact of varying EBSD pattern binning and exposure times on data quality.
- To compare experimental EBSD results with finite element analysis (FEA) predictions.
Main Methods:
- High-resolution EBSD mapping of indented silicon.
- Systematic variation of EBSD pattern binning and exposure times.
- Finite element analysis using a calibrated continuum damage-plasticity model with cohesive elements.
Main Results:
- EBSD successfully mapped residual strain and lattice rotation fields around indentations.
- Qualitative assessment of strain fields is possible with up to 4x4 binning.
- Quantitative analysis requires minimal binning and long exposure times for optimal smoothness.
- FEA results closely matched experimental measurements of residual strain and crack size.
Conclusions:
- High-resolution EBSD is effective for characterizing residual strain and lattice rotation in indented silicon.
- Optimizing EBSD acquisition parameters is critical for quantitative analysis.
- FEA provides a reliable method for simulating and understanding indentation-induced damage mechanisms in silicon.
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