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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: May 15, 2026

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
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An MMI-based polarization splitter using patterned metal and tilted joint.

Keisuke Kojima1, Wangqing Yuan, Bingnan Wang

  • 1Mitsubishi Electric Research Laboratories, 201 Broadway, Cambridge, MA 02139, USA. kojima@merl.com

Optics Express
|December 25, 2012
PubMed
Summary

Researchers developed a compact polarization splitter using an MMI coupler on an InP substrate. This device achieves high extinction ratios and low insertion loss across the C-band, suitable for optical communication systems.

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Published on: February 23, 2017

Area of Science:

  • Photonics and Optical Engineering
  • Materials Science in Optoelectronics

Background:

  • Polarization splitters are crucial components in optical communication systems.
  • Existing devices often face challenges with size, performance, or manufacturing tolerances.

Purpose of the Study:

  • To propose and simulate a novel, compact polarization splitter.
  • To optimize the device for high performance across the C-band and manufacturing robustness.

Main Methods:

  • Utilized a Multi-Mode Interference (MMI) coupler integrated with dielectric and gold layers on an Indium Phosphide (InP) substrate.
  • Employed a tilted joint design to precisely adjust the phase matching of TE and TM modes.
  • Conducted simulations to evaluate device performance parameters.

Main Results:

  • Achieved a polarization extinction ratio exceeding 23 dB for both TE and TM polarizations.
  • Demonstrated an insertion loss below 0.7 dB across the entire C-band wavelength range.
  • The MMI section was designed to be less than 540 μm, ensuring a compact footprint.

Conclusions:

  • The proposed InP-based polarization splitter offers excellent performance metrics.
  • The design demonstrates suitability for broadband applications and tolerance to manufacturing variations.
  • This compact device represents a significant advancement for integrated photonic circuits.