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Published on: March 20, 2015
High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology
Shinsuke Tanaka1, Seok-Hwan Jeong, Shigeaki Sekiguchi
1Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan. shin-tanaka@jp.fujitsu.com
Optics Express
|December 25, 2012
Summary
A novel silicon/III-V hybrid laser was developed for optical chips. This integrated laser offers stable single-wavelength output, low power consumption, and high performance across temperatures.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Silicon photonics is crucial for large-scale optical input/output (I/O) chips.
- Integrating lasers directly onto silicon is challenging but essential for advanced optical systems.
Purpose of the Study:
- To develop a single-wavelength silicon/III-V hybrid laser for large-scale silicon optical I/O chips.
- To achieve efficient integration and stable laser performance.
Main Methods:
- Developed an InP-based reflective semiconductor optical amplifier (SOA) chip.
- Integrated the SOA with a silicon wavelength-selection-mirror chip using a flip-chip configuration.
- Optimized mode-field matching and bonding for low interface coupling loss.
Main Results:
- Achieved a low coupling loss of 1.55 dB at the Si-SOA interface.
- Fabricated laser demonstrated a low threshold current (9.4 mA), high output power (15.0 mW), and high wall-plug efficiency (7.6%).
- Maintained high output power (>10 mW) up to 60°C due to excellent thermal conductance.
Conclusions:
- The flip-chip bonded hybrid laser provides stable single longitudinal mode operation.
- The device exhibits temperature-stable lasing and a low Relative Intensity Noise (RIN) level of <-130 dB/Hz.
- This technology is suitable for high-performance silicon optical I/O applications.
