Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics

Thanasis Georgiou1, Rashid Jalil, Branson D Belle

  • 1School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK.

Nature Nanotechnology
|December 25, 2012
PubMed
Summary

Graphene and tungsten disulfide create novel transistors for the post-silicon era. These new field-effect transistors offer high current modulation and operate on flexible substrates.