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Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Mnemonic Devices01:23

Mnemonic Devices

Mnemonic devices are cognitive tools that facilitate memory retention by linking new information to familiar patterns or organizational strategies. These techniques are beneficial for remembering complex or lengthy sets of information by simplifying and structuring them in easily retrievable ways.
Acronyms
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Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
MOSFET01:16

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Updated: May 15, 2026

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Memristive devices for computing.

J Joshua Yang1, Dmitri B Strukov, Duncan R Stewart

  • 1Hewlett-Packard Laboratories, Palo Alto, California 94304, USA. jianhuay@hp.com

Nature Nanotechnology
|December 28, 2012
PubMed
Summary
This summary is machine-generated.

Memristive devices, or resistance switches, offer advanced computing capabilities by retaining states based on voltage and current history. Understanding their ionic motion mechanisms is key to overcoming barriers for widespread application.

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Last Updated: May 15, 2026

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Published on: November 2, 2017

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Memristive devices are resistance switches that store information based on applied voltage and current history.
  • These devices, based on ionic motion in conductor/insulator/conductor stacks, offer superior performance over conventional integrated circuits.
  • Recent advancements have enabled small, fast, low-energy, and highly durable memristive devices suitable for 3D stacking.

Purpose of the Study:

  • To review recent progress in the development and understanding of memristive devices.
  • To examine the performance requirements for memristive-based computing.
  • To identify and address the challenges hindering the widespread application of memristive devices.

Main Methods:

  • Review of existing literature on memristive device development and understanding.
  • Analysis of performance metrics relevant to computing applications.
  • Identification of key challenges and potential solutions for memristive device implementation.

Main Results:

  • Memristive devices exhibit unique state retention properties based on electrical history.
  • Ionic motion is a key mechanism in a significant class of these devices.
  • Despite progress, underlying mechanisms require further clarification for broad adoption.

Conclusions:

  • Clarifying the fundamental mechanisms of memristive devices is crucial for their advancement.
  • Meeting performance requirements for computing necessitates further research and development.
  • Overcoming current challenges will pave the way for the widespread application of memristive technology.