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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)

V Cardin1, L I Dion-Bertrand, P Grégoire

  • 1Département de Physique and Regroupement Québécois sur Matériaux de Pointe, Université de Montréal, Case Postale 6128, Succursale Centre-ville, Montréal, QC, H3C 3J7, Canada.

Nanotechnology
|January 10, 2013
PubMed

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