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Efficiency improvement in InGaN-based solar cells by indium tin oxide nano dots covered with ITO films

Dong-Ju Seo1, Jae-Phil Shim, Sang-Bae Choi

  • 1School of Information and Communications, Gwangju Institute of Science and Technology (GIST), 261 Cheomdangwagiro, Buk-gu, Gwangju 500-712, South Korea.

Optics Express
|January 18, 2013
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...