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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

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Phonon-mediated interlayer conductance in twisted graphene bilayers.

V Perebeinos¹, J Tersoff, Ph Avouris

¹IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA.

Physical Review Letters

|February 2, 2013

Summary

Phonon scattering, not just momentum conservation, is key for interlayer conduction in rotated graphene. This finding reveals new possibilities for electronic device applications and predicts diode-like behavior at low temperatures.

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Fabricating van der Waals Heterostructures with Precise Rotational Alignment

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Published on: July 5, 2019

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Interlayer conduction in stacked graphene is typically limited by momentum conservation, especially with rotational misalignment.
Previous models did not fully account for the role of lattice vibrations (phonons) in facilitating charge transport between layers.

Purpose of the Study:

To investigate the role of phonon scattering in interlayer conduction in rotated graphene.
To explore the impact of this mechanism on the orientation dependence of conductivity.
To assess the potential for novel electronic device applications.

Main Methods:

Theoretical analysis of electron-phonon interactions in twisted bilayer graphene.
Modeling of interlayer conduction considering phonon-assisted transport.
Investigation of current-voltage characteristics under varying conditions (temperature, doping, rotation angle, bias).

Main Results:

Phonon scattering significantly facilitates interlayer conduction, contrary to expectations based solely on momentum conservation.
The orientation dependence of conduction is fundamentally different and more favorable for devices than previously predicted.
Diode-like current-voltage characteristics are predicted at low temperatures due to a phonon bottleneck effect.
Simple scaling laws accurately describe conductance behavior, highlighting the importance of the interlayer beating phonon mode.

Conclusions:

Phonon scattering is a critical factor governing interlayer transport in rotated graphene systems.
The findings suggest new pathways for designing advanced graphene-based electronic devices with tunable properties.
The predicted diode-like behavior opens avenues for nanoscale electronic components.