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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Hyun Ho Kim1, Jae Won Yang, Sae Byeok Jo
1Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea.
A simple dipping method introduces chloroform (CF) solvent between graphene and SiO₂ substrates, creating stable intercalated clusters. This process offers a controllable method for doping graphene, crucial for flexible electronics.
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