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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Electrical suppression of spin relaxation in GaAs(111)B quantum wells

A Hernández-Mínguez1, K Biermann, R Hey

  • 1Paul-Drude-Institut für Festkörkperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany. alberto@pdi-berlin.de

Physical Review Letters
|February 2, 2013
PubMed

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