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Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

Updated: May 14, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

A post silicon-on-insulator compatible smart tube technology.

Hongen Tu¹, Yong Xu

¹Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202, USA.

|February 2, 2013

Summary

This study presents a novel technology for creating micro-parylene tubes with integrated sensors. This method allows for the incorporation of high-temperature materials, enhancing sensor capabilities.

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Area of Science:

Materials Science
Microtechnology
Sensor Technology

Background:

Microfabrication techniques are crucial for developing advanced sensor systems.
Integrating sensors into micro-scale structures presents significant challenges, particularly with high-temperature materials.

Purpose of the Study:

To report a new technology for fabricating micro-parylene tubes with integrated sensors.
To demonstrate the capability of incorporating high-temperature solid-state materials into these micro-tubes.

Main Methods:

Fabrication of standard Complementary Metal-Oxide-Semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS) devices on silicon wafers.
Utilizing Xenon Difluoride (XeF(2)) isotropic silicon etching.
Applying conformal parylene coating to form the smart tubes.

Main Results:

Successful fabrication of micro-parylene tubes.
Demonstrated integration of sensors within the tubes.
Capability to incorporate high-temperature solid-state materials was achieved.

Conclusions:

The developed technology enables the creation of micro-parylene tubes with integrated sensors.
This fabrication approach is advantageous for incorporating high-temperature materials.
The method combines standard CMOS/MEMS fabrication with specialized etching and coating processes.