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InAs(1-x)P(x) nanowires grown by catalyst-free molecular-beam epitaxy.
I Isakov1, M Panfilova, M J L Sourribes
1London Centre for Nanotechnology, University College London, London, UK. ivan.isakov.10@ucl.ac.uk
Nanotechnology
|February 7, 2013
Summary
This study details the self-catalyzed growth of Indium Arsenide Phosphide (InAs(1-x)P(x)) nanowires on silicon substrates. Researchers controlled phosphorus incorporation, finding a 10:1 ratio for Arsenic to Phosphorus incorporation rates.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Vertical nanowire growth is crucial for advanced electronic and optoelectronic devices.
- Indium Arsenide Phosphide (InAs(1-x)P(x)) offers tunable bandgap properties.
- Integration of III-V semiconductors on silicon substrates remains a significant challenge.
Purpose of the Study:
- To report on the self-catalyzed growth of vertical InAs(1-x)P(x) nanowires on Si(111).
- To investigate the structural properties and composition of the grown nanowires.
- To understand the incorporation mechanism of phosphorus during growth.
Main Methods:
- Solid-source molecular-beam epitaxy (MBE) for nanowire synthesis.
- High-resolution transmission electron microscopy (HR-TEM) for structural analysis.
- Energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD) for composition analysis.
Main Results:
- Successfully grew vertical InAs(1-x)P(x) nanowires on Si(111) substrates.
- Identified a mixed wurtzite and zincblende crystal structure.
- Determined phosphorus content (x) in the range of 0-10%, dependent on phosphorus flux.
- Observed an incorporation rate coefficient ratio of As to P as 10 ± 5 to 1.
Conclusions:
- Demonstrated a viable method for self-catalyzed growth of InAs(1-x)P(x) nanowires on silicon.
- Established the relationship between phosphorus flux and incorporation in nanowires.
- Provided insights into the growth kinetics of ternary III-V nanowires.
