Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: May 14, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Third-harmonic UV generation in silicon nitride nanostructures.

Tingyin Ning1, Outi Hyvärinen, Henna Pietarinen

  • 1Department of Physics, Tampere University of Technology, P. O. Box 692, FI-33101 Tampere, Finland.

Optics Express
|February 8, 2013
PubMed
Summary

Silicon nitride films exhibit strong UV third-harmonic generation, significantly outperforming fused silica. Resonant waveguide gratings further boost this nonlinear optical effect, expanding CMOS-compatible material applications.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Ultra-low threshold optical bistability assisted by merging bound states in the continuum.

Optics express·2025
Same author

Multiple toroidal dipoles governed by mirror-coupled bound states in the continuum in a nanopillar array for a low-threshold nanolaser.

Optics letters·2025
Same author

Merging mirror-coupled bound states in the continuum at THz frequency.

Optics letters·2025
Same author

Spatial coherence measurement and control in multimode fibers.

Optics express·2025
Same author

3D-printed compact snap-shot lensless birefringence microscope based on digital on-axis holography.

Optics express·2025
Same author

Principles and metrics of extreme learning machines using a highly nonlinear fiber.

Nanophotonics (Berlin, Germany)·2025

Area of Science:

  • Nonlinear optics
  • Materials science
  • Photonics

Background:

  • Silicon nitride is a CMOS-compatible material with potential nonlinear optical applications.
  • Third-harmonic generation (THG) is a key nonlinear optical process for frequency conversion.

Purpose of the Study:

  • To investigate UV third-harmonic generation in silicon nitride films.
  • To quantify the third-order nonlinear susceptibility (χ(3)) of silicon nitride.
  • To enhance THG using resonant waveguide gratings.

Main Methods:

  • Fabrication of silicon nitride films and resonant waveguide gratings.
  • Measurement of absolute third-order susceptibility (χ(3)) at 1064 nm wavelength.
  • Characterization of THG enhancement via grating structures.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

Related Experiment Videos

Last Updated: May 14, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

Main Results:

  • Determined silicon nitride's χ(3) to be (2.8 ± 0.6) × 10⁻²⁰ m²/V², significantly higher than fused silica.
  • Achieved a 2000-fold enhancement in THG using resonant waveguide gratings.
  • Demonstrated strong UV THG from silicon nitride-based devices.

Conclusions:

  • Silicon nitride is a highly efficient material for UV nonlinear optics.
  • Resonant waveguide gratings provide substantial enhancement for THG.
  • These findings enable CMOS-compatible nonlinear photonic devices operating in the UV spectrum.