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Updated: May 14, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Gated tunability and hybridization of localized plasmons in nanostructured graphene
Zheyu Fang1, Sukosin Thongrattanasiri, Andrea Schlather
1Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States.
Abstract:
Graphene has emerged as an outstanding material for optoelectronic applications due to its high electronic mobility and unique doping capabilities. Here we demonstrate electrical tunability and hybridization of plasmons in graphene nanodisks and nanorings down to 3.7 μm light wavelength. By electrically doping patterned graphene arrays with an applied gate voltage, we observe radical changes in the plasmon energy and strength, in excellent quantitative agreement with rigorous analytical theory. We further show evidence of an unexpected increase in plasmon lifetime with growing energy. Plasmon hybridization and electrical doping in nanorings of suitably chosen nanoscale dimensions are key elements for bringing the optical response of graphene closer to the near-infrared, where it can provide a robust, integrable platform for light modulation, switching, and sensing.

