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Updated: May 14, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
First-principles study of layered antiferromagnetic CuCrX2 (X = S, Se and Te)
Divya Srivastava1, Girish C Tewari, Maarit Karppinen
1Department of Chemistry, Aalto University, FI-00076 Aalto, Finland.
Abstract:
We present detailed electronic band-structure calculations for antiferromagnetic chromium compounds, CuCrX(2) (X = S, Se or Te), carried out using spin-polarized density functional theory within the generalized-gradient approximation (GGA). A narrow-band semiconductor-to-metal transition is observed upon replacement of S or Se by Te. The indirect bandgap is found at 0.58 eV and 0.157 eV for CuCrS(2) and CuCrSe(2), respectively. The results for our theoretical calculations are well in line with the electronic transport properties experimentally observed for CuCrS(2) and CuCrSe(2).
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