Horizontally patterned Si nanowire growth for nanomechanical devices

M Fernandez-Regulez1, M Sansa, M Serra-Garcia

  • 1Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Campus UAB, F-08193 Bellaterra, Spain.

Nanotechnology
|February 14, 2013
PubMed
Summary

We developed a new method for growing silicon nanowires on vertical surfaces, enabling precise positioning for nanomechanical devices. This technique allows for the creation of nanowire resonators with measurable mechanical resonances for advanced sensing applications.

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