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Microscopic Nanomechanical Dissipation in Gallium Arsenide Resonators.

M Hamoumi¹, P E Allain¹, W Hease¹

¹Matériaux et Phénomènes Quantiques, Université Paris Diderot, CNRS UMR 7162, Sorbonne Paris Cité, 75013 Paris, France.

Physical Review Letters

|June 16, 2018

Summary

Nanomechanical dissipation in gallium arsenide resonators is dominated by two-level systems, especially at surfaces. These systems influence damping and fluctuations across a wide temperature range, impacting device performance.

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Area of Science:

Solid State Physics
Nanomechanics
Optomechanics

Background:

High-frequency optomechanical resonators are crucial for sensitive measurements.
Understanding nanomechanical dissipation is key to improving device performance.
Gallium arsenide (GaAs) is a promising material for optomechanical devices.

Purpose of the Study:

To systematically investigate nanomechanical dissipation in GaAs optomechanical disk resonators.
To identify the dominant sources of dissipation at high frequencies (≈300 MHz).
To correlate dissipation mechanisms with microscopic properties and surface effects.

Main Methods:

Fabrication of high-frequency GaAs optomechanical disk resonators.
Measurements of mechanical dissipation at cryogenic (3 K) and room temperatures (300 K).
Analysis using phonon-phonon interaction models and two-level system (TLS) models.
Surface modification via atomic layer deposition (ALD) of alumina.

Main Results:

Phonon-phonon interactions contribute a temperature-dependent loss background, diminishing at cryogenic temperatures.
Surface dissipation is significant, as evidenced by changes in quality factor after alumina ALD.
The temperature dependence of dissipation is accurately described by TLS models.
TLS, particularly at surfaces, are identified as the primary cause of damping and fluctuations.

Conclusions:

Nanomechanical dissipation in GaAs optomechanical resonators is governed by microscopic properties, specifically TLS.
Surface-localized TLS play a critical role in damping and fluctuations from 3 K to 300 K.
Minimizing TLS, especially at surfaces, is essential for enhancing the performance of high-quality crystalline nanomechanical devices.