Enhanced electrical efficiency of quantum dot based LEDs with TiO2 as the electron transport layer fabricated under
Khan Qasim1, Jing Chen, Yidan Zhou
1Display Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, P. R. China.
Abstract:
We report Quantum dot based light emitting diodes (QD-LEDs) fabricated under the optimized annealing conditions of TiO2 films used as the electron transport layer (ETL) in the device. Films of different thicknesses were fabricated by varying annealing conditions leading to the improved electrical properties in QD-LEDs. Under the optimized annealing conditions both the turn-on voltage and voltage-drop across the device were minimized as a result of the increased electrical conductivity of ETL. Due to the minimum turn-on voltage and voltage-drop across the device the overall electrical performance of QD-LED device in our case has been improved by 81.5 percent.
