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Related Concept Videos

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Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
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Low temperature solution-processed high performance photodiode based on Si-ZnO core-shell structure.

Dong Liu1, Xiaojuan Shen, Tao Song

  • 1Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, P R China.

Physical Chemistry Chemical Physics : PCCP
|February 28, 2013
PubMed
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This study demonstrates novel silicon nanowire (SiNWs)-zinc oxide (ZnO) core-shell photodiodes. These devices exhibit superior photoresponse and sensitivity compared to planar junctions, achieved through low-temperature processing.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Devices

Background:

  • Silicon nanowires (SiNWs) offer unique electronic and optical properties.
  • Core-shell heterojunctions are promising for advanced photodetector applications.
  • Low-temperature fabrication methods are crucial for preserving silicon properties.

Purpose of the Study:

  • To demonstrate radial heterojunction photodiodes using SiNWs and ZnO.
  • To investigate the performance advantages of a core-shell structure over planar junctions.
  • To develop a facile, low-temperature fabrication process for high-performance photodiodes.

Main Methods:

  • Fabrication of SiNWs-ZnO core-shell structures via spin-coating ZnO nanoparticles.
  • Low-temperature post-annealing (<270 °C).
  • Characterization of diode rectifying properties and photoresponse across visible and near-infrared spectra.

Main Results:

  • Achieved typical diode rectifying characteristics with an ideality factor of 1.28.
  • Demonstrated excellent photoresponse with a peak responsivity of 0.54 A/W at zero bias.
  • Observed superior sensitivity compared to vacuum-deposited devices and planar Si-ZnO junctions (0.34 A/W).

Conclusions:

  • The radial SiNWs-ZnO core-shell structure enhances light harvesting, interfacial area, and charge collection.
  • Facile solution-processed techniques enable low-temperature fabrication, avoiding silicon degradation.
  • This approach offers a simplified and effective route to high-performance photodiodes.