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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Electronic and transport properties of unbalanced sublattice N-doping in graphene

Aurélien Lherbier1, Andrés Rafael Botello-Méndez, Jean-Christophe Charlier

  • 1Institute of Condensed Matter and Nanosciences (IMCN), Université catholique de Louvain (UCL), 1348 Louvain-la-Neuve, Belgium. aurelien.lherbier@uclouvain.be

Nano Letters
|March 13, 2013
PubMed

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