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Updated: May 13, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Indirect to direct band gap transition in ultra-thin silicon films

Linhan Lin1, Zhengcao Li, Jiayou Feng

  • 1Department of Materials Science and Engineering, Key Lab of Advanced Materials, Tsinghua University, Beijing 100084, People's Republic of China.

Physical Chemistry Chemical Physics : PCCP
|March 16, 2013
PubMed

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