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Updated: May 13, 2026
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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Complex dynamics and scale invariance of one-dimensional memristive networks
Yuriy V Pershin1, Valeriy A Slipko, Massimiliano Di Ventra
1Department of Physics and Astronomy and University of South Carolina Nanocenter, University of South Carolina, Columbia, South Carolina 29208, USA. pershin@physics.sc.edu
Summary
Simple memristive systems exhibit complex behaviors like resistance changes and history dependence. This research reveals scale-invariant properties in memristive networks, crucial for future electronic applications.
Area of Science:
- Physics
- Materials Science
- Electrical Engineering
Background:
- Memristive systems, or resistive systems with memory, are gaining significant research interest.
- Understanding the fundamental properties of simple memristive networks is essential for advancing their technological applications.
Purpose of the Study:
- To investigate the nontrivial physical properties of the simplest one-dimensional memristive networks.
- To analyze the impact of single element variability on network behavior.
- To identify scale-invariant characteristics in memristive systems.
Main Methods:
- Theoretical analysis of one-dimensional memristive networks.
- Inclusion of single element variability in the model.
- Examination of adiabatic processes and input signal history.
Main Results:
- Observed dynamical acceleration and slowing down of total resistance.
- Demonstrated dependence of the final state on input signal history.
- Identified switching avalanches in memristive ladders.
- Discovered scale invariance in voltage threshold dynamics, independent of network size.
Conclusions:
- Single element variability in memristive systems leads to complex, emergent behaviors.
- Scale invariance is a key property, particularly when small threshold voltages are present.
- These findings enhance the understanding of memory's role in complex networks and inform technological development.
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