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Updated: May 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Ion impacts on graphene/Ir(111): interface channeling, vacancy funnels, and a nanomesh
Sebastian Standop1, Ossi Lehtinen, Charlotte Herbig
1II. Physikalisches Insitut, Universität zu Köln, Zülpicher Strasse 77, 50937 Köln, Germany. standop@ph2.uni-koeln.de
Abstract:
By combining ion beam experiments and atomistic simulations we study the production of defects in graphene on Ir(111) under grazing incidence of low energy Xe ions. We demonstrate that the ions are channeled in between graphene and the substrate, giving rise to chains of vacancy clusters with their edges bending down toward the substrate. These clusters self-organize to a graphene nanomesh via thermally activated diffusion as their formation energy varies within the graphene moiré supercell.

