Related Experiment Video

Updated: May 12, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

Avalanche breakdown in GaTa4Se(8-x)Te(x) narrow-gap Mott insulators

V Guiot1, L Cario, E Janod

  • 1Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, Nantes, France.

Nature Communications
|April 18, 2013
PubMed

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