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Lift-off protocols for thin films for use in EXAFS experiments
S Decoster1, C J Glover, B Johannessen
1Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, Leuven, Belgium. stefan.decoster@fys.kuleuven.be
Journal of Synchrotron Radiation
|April 18, 2013
Summary
New lift-off protocols enable high-quality, freestanding thin films for advanced X-ray absorption spectroscopy. This method improves extended X-ray absorption fine structure (EXAFS) measurements and benefits other techniques by removing substrate interference.
Area of Science:
- Materials Science
- Physics
- Chemistry
Background:
- Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy is a powerful tool for material analysis.
- Conventional sample preparation methods can introduce substrate artifacts, limiting EXAFS data quality.
Purpose of the Study:
- To present novel lift-off protocols for preparing high-quality, free-standing thin films.
- To demonstrate the benefits of these protocols for improved EXAFS measurements.
Main Methods:
- Utilizing wet chemical etching to remove the substrate or interlayer, yielding free-standing thin films.
- Developing protocols for various single-crystalline and amorphous semiconductors (GeSi, InGaAs, InGaP, InP, GaAs) and dielectrics (SiO2, Si3N4).
Main Results:
- Obtained high-quality, micrometer-thin free-standing films.
- Achieved superior EXAFS data quality in transmission and fluorescence modes compared to conventional methods.
- Demonstrated applicability to diverse material types.
Conclusions:
- The developed lift-off procedure significantly enhances EXAFS data quality by eliminating substrate contributions.
- This technique is beneficial for various experimental methods requiring substrate-free samples, such as small-angle X-ray scattering.
