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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

Sungho Kim1, Sae-Jin Kim, Kyung Min Kim

  • 1Samsung Advanced Institute of Technology, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea. kkam226@gmail.com

Scientific Reports
|April 23, 2013
PubMed

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