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Study on the crystallization process of GaSb-Sb2Te3 pseudobinary films for phase-change random access memory
Yegang Lu1, Simian Li, Sannian Song
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Journal of Nanoscience and Nanotechnology
|May 8, 2013
Summary
This study investigated the crystallization of GaSb-Sb2Te3 films, finding that Ga concentration affects crystallization temperature, activation energy, and mechanism. Ga27Sb47Te26 showed the fastest crystallization, ideal for phase-change memory.
Area of Science:
- Materials Science
- Solid State Physics
- Thin Film Technology
Background:
- Understanding crystallization kinetics is crucial for developing advanced materials.
- Gallium Antimonide-Antimony Telluride (GaSb-Sb2Te3) pseudobinary films are promising for phase-change applications.
- Co-sputtering is a common technique for fabricating thin films with tunable compositions.
Purpose of the Study:
- To investigate the non-isothermal crystallization process of GaSb-Sb2Te3 films.
- To determine the influence of Gallium (Ga) concentration on crystallization parameters.
- To identify optimal compositions for phase-change random access memory (PCRAM) applications.
Main Methods:
- In-situ electrical resistance-temperature measurements to determine crystallization parameters.
- Kissinger's plot and Ozawa's method to calculate activation energy and kinetics exponent.
- Johnson-Mehl-Avrami equation and laser-induced reflectivity changes for crystallization time estimation.
Main Results:
- Crystallization temperature and activation energy increased with Ga concentration (5-34 mol%).
- Average kinetics exponent decreased from 1.63 to 1.02, indicating a shift towards one-dimensional growth for Ga concentrations >10 mol%.
- Ga27Sb47Te26 film exhibited the shortest crystallization time.
Conclusions:
- Ga concentration significantly impacts the crystallization kinetics and mechanism of GaSb-Sb2Te3 films.
- The one-dimensional growth mechanism was confirmed for specific compositions.
- Ga27Sb47Te26 is a potential candidate for high-performance phase-change random access memory due to its rapid crystallization.
