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Control parameters for fabrication of single-electron transistors using field-emission-induced electromigration
Shunsuke Akimoto1, Mitsuki Ito, Shunsuke Ueno
1Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology Koganei, Tokyo 184-8588, Japan.
Journal of Nanoscience and Nanotechnology
|May 8, 2013
Summary
This study introduces a simple method using field-emission-induced electromigration to control electrical characteristics of single-electron transistors (SETs). The technique allows for tunable charging energy and fabrication of SETs by adjusting current through nanogaps.
Area of Science:
- Nanotechnology
- Condensed Matter Physics
- Electrical Engineering
Background:
- Single-electron transistors (SETs) are crucial for quantum computing and nanoscale electronics.
- Precise control over SET electrical characteristics, such as charging energy, is essential for device performance.
- Existing fabrication methods for SETs can be complex and lack fine-tuning capabilities.
Purpose of the Study:
- To develop a simple and effective method for controlling the electrical characteristics of planar-type metal-based SETs.
- To investigate the relationship between field-emission-induced electromigration parameters and SET properties.
- To demonstrate the fabrication of SETs with tunable charging energy.
Main Methods:
- Utilizing field-emission-induced electromigration by passing current through a nanogap to fabricate SETs.
- Adjusting the preset current magnitude during electromigration to control charging energy.
- Analyzing current-voltage characteristics and Coulomb blockade phenomena at low temperatures (16 K).
Main Results:
- Successful fabrication of SETs using field-emission-induced electromigration with a preset current of 500 nA.
- Observation of Coulomb blockade at 16 K, indicating the formation of a single electron island.
- Demonstrated periodic modulation of Coulomb blockade voltage by gate voltage.
- Showed that increasing preset current decreased charging energy by reducing nanogap separation.
Conclusions:
- Field-emission-induced electromigration provides a straightforward method for fabricating and controlling electrical properties of planar metal-based SETs.
- The preset current and initial nanogap separation are key parameters for tuning SET characteristics.
- This technique offers a promising route for developing reliable and tunable nanoscale electronic devices.
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