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Updated: May 11, 2026
Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
Published on: October 6, 2020
Improvement in crystal quality and optical properties of n-type GaN employing nano-scale SiO2 patterned n-type GaN
Min Sung Jo1, Karthikeyan Giri Sadasivam, Wael Z Tawfik
1Interdisciplinary Program of Photonic Engineering, Chonnam National University, Yongbong 300 Gwangju 500-757, Korea.
Abstract:
n-type GaN epitaxial layers were regrown on the patterned n-type GaN substrate (PNS) with different size of silicon dioxide (SiO2) nano dots to improve the crystal quality and optical properties. PNS with SiO2 nano dots promotes epitaxial lateral overgrowth (ELOG) for defect reduction and also acts as a light scattering point. Transmission electron microscopy (TEM) analysis suggested that PNS with SiO2 nano dots have superior crystalline properties. Hall measurements indicated that incrementing values in electron mobility were clear indication of reduction in threading dislocation and it was confirmed by TEM analysis. Photoluminescence (PL) intensity was enhanced by 2.0 times and 3.1 times for 1-step and 2-step PNS, respectively.
