Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

Area of Science:

• Materials Science
• Nuclear Engineering
• Semiconductor Physics

Background:

• Conventional radiation detectors suffer from material damage and temperature limitations in harsh environments.
• Nuclear reactor cores and similar settings require robust detectors capable of withstanding extreme conditions.

Purpose of the Study:

• To fabricate and evaluate a wide-band gap semiconductor radiation detector based on silicon carbide.
• To assess the detector's performance, particularly its radiation response and energy resolution, at high temperatures.

Main Methods:

• Fabrication of a silicon carbide radiation detector with components suitable for high-temperature applications.
• Measurement of alpha particle response using an Americium-241 source at varying operating voltages and temperatures (30°C to 250°C).
• Analysis of alpha-particle spectra obtained at zero bias operation.

Main Results:

• The silicon carbide detector demonstrated measurable radiation response to alpha particles.
• Energy resolution remained consistently stable, with a deviation within 3.5% across the tested temperature range.
• The detector operated effectively even at elevated temperatures up to 250°C.

Conclusions:

• Silicon carbide is a viable material for fabricating radiation detectors for high-temperature environments.
• The developed detector exhibits stable performance and energy resolution, making it suitable for applications like nuclear reactors.