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Patterning via Optical Saturable Transitions - Fabrication and Characterization
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Block-based mask optimization for optical lithography.

Xu Ma1, Zhiyang Song, Yanqiu Li

  • 1Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China.

Applied Optics
|May 15, 2013
PubMed
Summary
This summary is machine-generated.

A new block-based optical proximity correction (BBOPC) method improves integrated circuit fabrication by optimizing mask patterns for better manufacturability and lithographic performance. This approach addresses limitations of pixel-based methods, ensuring compliance with manufacturing constraints.

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Area of Science:

  • Integrated circuit fabrication
  • Lithography
  • Computational imaging

Background:

  • Pixel-based optical proximity correction (PBOPC) is a resolution enhancement technique (RET) for integrated circuit fabrication.
  • PBOPC increases mask complexity and reduces manufacturability, often leading to suboptimal patterns that degrade lithographic performance.
  • Current methods using regularization or mask manufacturing rule check (MRC) struggle to balance manufacturability and lithographic performance.

Purpose of the Study:

  • To develop a block-based optical proximity correction (BBOPC) algorithm for optimal mask patterns with manufacturability compliance.
  • To improve lithographic imaging performance while adhering to mask manufacturing constraints.
  • To provide a BBOPC method suitable for both dry and immersion lithography.

Main Methods:

  • Developed a BBOPC algorithm that shapes masks using overlapped basis blocks instead of pixels.
  • Formulated BBOPC optimization using a vector imaging model applicable to various lithography systems.
  • Employed a modified conjugate gradient method for successive optimization of main features (MF) and subresolution assist features (SRAF).
  • Introduced a weight matrix in the cost function to maintain edge fidelity.

Main Results:

  • The BBOPC algorithm effectively smooths unmanufacturable jogs along edges.
  • Simulations demonstrate improved lithographic imaging performance.
  • The method successfully maintains mask manufacturing constraints.

Conclusions:

  • BBOPC offers a superior alternative to PBOPC for integrated circuit fabrication.
  • The BBOPC algorithm achieves optimal mask patterns that are manufacturable and enhance lithographic performance.
  • This technique provides a robust solution for advanced lithography challenges.