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Updated: May 11, 2026

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se2 Thin-film Solar Cells
Published on: July 19, 2019
Amorphous Cu-In-S nanoparticles as precursors for CuInSe2 thin-film solar cells with a high efficiency
Sejin Ahn1, Yoo Jeong Choi, Kyunhwan Kim
1Solar Energy Department, Korea Institute of Energy Research, Yuseonggu, Daejeon, Korea.
Abstract:
CuInSe2 (CISe) absorber layers for thin-film solar cells were fabricated through the selenization of amorphous Cu-In-S nanoparticles, which were prepared by using a low-temperature colloidal process within one minute without any external heating. Two strategies for obtaining highly dense CISe absorber films were used in this work; the first was the modification of nanoparticle surface through chelate complexation with ethanolamine, and the second strategy utilized the lattice expansion that occurred when S atoms in the precursor particles were replaced with Se during selenization. The synergy of these two strategies allowed formation of highly dense CISe thin films, and devices fabricated using the absorber layer demonstrated efficiencies of up to 7.94% under AM 1.5G illumination without an anti-reflection coating.

