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Updated: May 11, 2026

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
E(1)(A) electronic band gap in wurtzite InAs nanowires studied by resonant Raman scattering
Ilaria Zardo1, Sara Yazji, Nicolas Hörmann
1Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, Germany.
Abstract:
We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E2(H) mode resonance indicates that the E1(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende InAs E1 gap. These findings confirm recent theoretical calculations of crystal phase induced bandstructure modifications.
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