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Related Concept Videos

Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

Updated: May 11, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

A silicon electromechanical photodetector.

Siddharth Tallur1, Sunil A Bhave

  • 1OxideMEMS Lab, Cornell University, Ithaca 14850, New York, USA.

Nano Letters
|May 28, 2013
PubMed
Summary
This summary is machine-generated.

This study introduces a silicon microresonator that converts optical signals into electrical current, overcoming limitations in on-chip communication platforms. This novel photodetector design offers a promising alternative to conventional devices.

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Area of Science:

  • Optomechanics
  • Photonics
  • Integrated Optics

Background:

  • On-chip silicon communication platforms require efficient photodetectors for optical-to-electrical signal conversion.
  • Conventional photodetectors face challenges like dark current, limiting performance.
  • Optomechanical systems offer novel functionalities for optical signal processing.

Purpose of the Study:

  • To present a coupled silicon microresonator as a photodetector alternative.
  • To demonstrate optical intensity modulation conversion into electrical current.
  • To explore a resonant principle that bypasses conventional photodetector limitations.

Main Methods:

  • Utilizing a coupled silicon microresonator design.
  • Applying near-infrared optical intensity modulation at specific frequencies (174.2 MHz and 1.198 GHz).
  • Measuring the conversion into motional electrical current.

Main Results:

  • Successfully converted optical intensity modulation to electrical current using the microresonator.
  • The device operates within the mechanical resonance bandwidth, detecting continuous wave laser light modulation.
  • Demonstrated elimination of dark current issues inherent in traditional photodetectors.

Conclusions:

  • The silicon microresonator effectively emulates a photodetector for optical intensity modulation.
  • The resonant operation principle offers advantages over conventional photodetectors.
  • Potential exists for extending this technology to the quantum regime as a photon-phonon translator.